The Mn site in Mn-doped GaAs nanowires: an EXAFS study

Suppression of electron spin relaxation in Mn-doped GaAs.

We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter, the...

SPIN-DEPENDENT TRANSPORT IN Mn DOPED GaAs AND GaN DIODES

OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNLOGY P.O. BOX 1000, FI-02015 TKK http://www.tkk.fi Author Heikki Holmberg Name of the dissertation Spin-dependent transport in Mn Doped GaAs and GaN diodes Manuscript submitted 16.11.2007 Manuscript revised 4.2.2008 Date of the defence 14.3.2008 Monograph Article dissertation (summary + original articles) Faculty Faculty of Electronics, Commu...

Magnetotransport in ferromagnetic Schottky diodes made of Mn-doped GaAs

Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carri...

Synthesis and magnetic properties of Mn doped ZnO nanowires

Mn doped ZnO nanowires have been synthesized using a simple autocombustion method. The as-synthesized Mn doped ZnO nanowires were characterized by X-ray diffraction and transmission electron microscopy. An increase in the hexagonal lattice parameters of ZnO is observed on increasing the Mn concentration. Optical absorption studies show an increment in the band gap with increasing Mn content, an...